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簡要描述：等離子體去膠機(jī)（高性價(jià)比） Isotropic dry etching of polymer （photo resist） Cleaning of silicon （or glass） wafer surface Removal of native oxide on wafer
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等離子體去膠機(jī)（高性價(jià)比）
儀器應(yīng)用：
Isotropic dry etching of polymer (photo resist)
Cleaning of silicon (or glass) wafer surface
Removal of native oxide on wafer
等離子體去膠機(jī)（高性價(jià)比）技術(shù)參數(shù)：
Sample size & throughput : 4 ~ 8inch, Single wafer
RF power : 600W @13.56MHz, Auto matching control
Substrate chuck : Heating or Cooling available (selectable)
Process gas : O2, CF4 ,Ar, N2
Gas supply method : Showerhead type
Ultimate pressure : ≤ 5×10-3Torr
Vacuum pump : Rotary pump
Process control : Auto process control (PLC)
常用工藝參數(shù)：
Photoresist Etch
| gas | 100% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 997 angstroms/min |
| uniformity | +/- 5% |
Nitride Etch
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 450 angstroms/min |
| uniformity | +/- 5% |
BiPolar Silicon Glass (BPSG) Etch
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 520 angstroms/min |
| uniformity | +/- 5% |
PolySilicon Glass (PSG) Etch
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 450 angstroms/min |
| uniformity | +/- 5% |
Oxide Etch (SiO2)
| gas | 95% CF4 / 5% O2 |
| operating pressure | 100 millitorr |
| power level | 100 watts |
| etch rate | 200 angstroms/min |
| uniformity | +/- 10% |
Aluminum Etch*
| gas | 80% BCl3 /20% Cl2 |
| operating pressure | 150 millitorr |
| power level | 150 watts |
| etch rate | 200 angstroms/min |
| uniformity | +/- 5% |
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